Search for: All records

Abstract High‐coherence visible and near‐visible laser sources are centrally important to the operation of advanced position/navigation/timing systems as well as classical/quantum sensing systems. However, the complexity and size of these bench‐top lasers are an impediment to their transition beyond the laboratory. Here, a system‐on‐chip that emits high‐coherence near‐visible lightwaves is demonstrated. The devices rely upon a new approach wherein wavelength conversion and coherence increase by self‐injection locking are combined within a single nonlinear resonator. This simplified approach is demonstrated in a hybridly‐integrated device and provides a short‐term linewidth of around 4.7 kHz (10 kHz before filtering). On‐chip converted optical power over 2 mW is also obtained. Moreover, measurements show that heterogeneous integration can result in a conversion efficiency higher than 25% with an output power over 11 mW. Because the approach uses mature III–V pump lasers in combination with thin‐film lithium niobate, it can be scaled for low‐cost manufacturing of high‐coherence visible emitters. Also, the coherence generation process can be transferred to other frequency conversion processes, including optical parametric oscillation, sum/difference frequency generation, and third‐harmonic generation. 

Abstract 2D layered materials have emerged in recent years as a new platform to host novel electronic, optical, or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between the basal plane and cross the plane. The structural and property anisotropies inside their basal plane, however, are much less investigated. Black phosphorus, for example, is a 2D material that has such in‐plane anisotropy. Here, a rare chemical form of arsenic, called black‐arsenic (b‐As), is reported as a cousin of black phosphorus, as an extremely anisotropic layered semiconductor. Systematic characterization of the structural, electronic, thermal, and electrical properties of b‐As single crystals is performed, with particular focus on its anisotropies along two in‐plane principle axes, armchair (AC) and zigzag (ZZ). The analysis shows that b‐As exhibits higher or comparable electronic, thermal, and electric transport anisotropies between the AC and ZZ directions than any other known 2D crystals. Such extreme in‐plane anisotropies can potentially implement novel ideas for scientific research and device applications.